AOB411L 60v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -78a r ds(on) (at v gs =-10v) < 16.5m ? r ds(on) (at v gs =-4.5v) < 22m ? 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc -230 pulsed drain current c continuous drain current parameter typ max t c =25c 2.1 93 t c =100c junction and storage temperature range -55 to 175 c thermal characteristics units maximum junction-to-ambient a c/w r ja 11 47 15 v 20 gate-source voltage drain-source voltage -60 the AOB411L combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -60v avalanche energy l=0.1mh c mj avalanche current c -6.5 continuous drain current 296 -8 a -77 a t a =25c i dsm a t a =70c i d -78 -55 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 187 1.3 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.6 60 0.8 g d s rev 0: mar. 2011 www.aosmd.com page 1 of 6
AOB411L symbol min typ max units bv dss -60 v v ds =-60v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.5 -2 -2.5 v i d(on) -230 a 13.5 16.5 t j =125c 20.5 25 17 22 m ? ? q g (10v) 65 83 100 nc q g (4.5v) 35 40 50 nc q gs 15 nc q gd 18 nc t d(on) 17.5 ns t r 20 ns t d(off) 83.5 ns t f 37 ns t rr 18 27 36 ns q rr 110 165 215 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-20a, di/dt=500a/ s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =-10v, v ds =-30v, r l =1.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =-10v, v ds =-30v, i d =-20a gate source charge gate drain charge total gate charge m ? i s =-1a,v gs =0v v ds =-5v, i d =-20a v gs =-4.5v, i d =-20a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss a v ds =v gs i d =-250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance i f =-20a, di/dt=500a/ s v gs =0v, v ds =-30v, f=1mhz switching parameters a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedance from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev 0: mar. 2011 www.aosmd.com page 2 of 6
AOB411L typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 123456 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 12 14 16 18 20 0 5 10 15 20 25 30 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-20a v gs =-10v i d =-20a 10 15 20 25 30 35 40 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-20a 25c 125c 0 20 40 60 80 100 012345 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-3v -3.5v -5v -7v -10v -4v -4.5v 25c rev 0: mar. 2011 www.aosmd.com page 3 of 6
AOB411L typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 102030405060708090 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 102030405060 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =-30v i d =-20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s r jc =0.8c/w rev 0: mar. 2011 www.aosmd.com page 4 of 6
AOB411L typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 40 80 120 160 200 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 0.01 1 100 10000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r ja =60c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) -i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 0: mar. 2011 www.aosmd.com page 5 of 6
AOB411L vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 0: mar. 2011 www.aosmd.com page 6 of 6
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